SI8425DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

50 ns

Rds On (Max) @ Id, Vgs :

23m Ω @ 2A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Radiation Hardening :

No

Contact Plating :

Tin

Pbfree Code :

yes

Factory Lead Time :

21 Weeks

Rise Time :

50ns

Drain to Source Breakdown Voltage :

-20V

Resistance :

23mOhm

Lead Free :

Lead Free

JESD-609 Code :

e3

Power Dissipation-Max :

1.1W Ta 2.7W Tc

Power Dissipation :

2.7W

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±10V

ECCN Code :

EAR99

Package / Case :

4-UFBGA, WLCSP

Drain to Source Voltage (Vdss) :

20V

Published :

2017

Gate to Source Voltage (Vgs) :

10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 10V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Fall Time (Typ) :

200 ns

Number of Pins :

4

Turn-Off Delay Time :

600 ns

Continuous Drain Current (ID) :

9.3A

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Element Configuration :

Single