SI8424DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

4

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Radiation Hardening :

No

Vgs (Max) :

±5V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

31m Ω @ 1A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1V @ 250μA

Pin Count :

4

Turn On Delay Time :

8 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Terminal Form :

UNSPECIFIED

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Resistance :

31mOhm

Threshold Voltage :

1V

Terminal Position :

BOTTOM

Package / Case :

4-XFBGA, CSPBGA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Continuous Drain Current (ID) :

1.3A

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.78W Ta 6.25W Tc

Published :

2013

Packaging :

Tape and Reel (TR)

Nominal Vgs :

1 V

Power Dissipation :

2.78W

Gate to Source Voltage (Vgs) :

5V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12.2A Tc

ECCN Code :

EAR99

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 4V

Rise Time :

12ns

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

20A

FET Type :

N-Channel

Mount :

Surface Mount

REACH SVHC :

Unknown

Turn-Off Delay Time :

110 ns

Drain to Source Breakdown Voltage :

8V

Fall Time (Typ) :

40 ns

Number of Terminations :

4