SI8424CDB-T1-E1
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- Mfr.Part #
- SI8424CDB-T1-E1
- Manufacturer
- Vishay
- Package / Case
- 4-UFBGA, WLCSP
- Datasheet
- Download
- Description
- MOSFET N-CH 8V 4MICROFOOT
- Stock
- 2,536
- In Stock ：
- 2,536
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Cut Tape (CT)
- Contact Plating :
- Tin
- Terminal Form :
- Ball
- Published :
- 2014
- Fall Time (Typ) :
- 40 ns
- Threshold Voltage :
- 800mV
- Power Dissipation :
- 2.7W
- Element Configuration :
- Single
- Resistance :
- 20mOhm
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 2A, 4.5V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 4.5V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Factory Lead Time :
- 21 Weeks
- Series :
- TrenchFET®
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340pF @ 4V
- DS Breakdown Voltage-Min :
- 8V
- Gate to Source Voltage (Vgs) :
- 5V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Turn On Delay Time :
- 30 ns
- Vgs (Max) :
- ±5V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 1.1W Ta 2.7W Tc
- Drain to Source Voltage (Vdss) :
- 8V
- Rise Time :
- 40ns
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 150 ns
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 4-UFBGA, WLCSP
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 800mV @ 250μA
- Datasheets
- SI8424CDB-T1-E1
N-Channel Cut Tape (CT) 20m Ω @ 2A, 4.5V ±5V 2340pF @ 4V 40nC @ 4.5V 8V 4-UFBGA, WLCSP
SI8424CDB-T1-E1 Overview
A device's maximum input capacitance is 2340pF @ 4V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 5V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 800mV.For normal operation, maintain the DS breakdown voltage above 8V.To operate this transistor, you need to apply a 8V drain to source voltage (Vdss).This device uses no drive voltage (1.2V 4.5V) to reduce its overall power consumption.
SI8424CDB-T1-E1 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 150 ns
a threshold voltage of 800mV
a 8V drain to source voltage (Vdss)
SI8424CDB-T1-E1 Applications
There are a lot of Vishay Siliconix
SI8424CDB-T1-E1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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