SI8417DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Min Operating Temperature :

-55°C

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

21mOhm @ 1A, 4.5V

Power Dissipation-Max :

2.9W Ta 6.57W Tc

Power Dissipation :

2.9W

Fall Time (Typ) :

240 ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

380 ns

Current - Continuous Drain (Id) @ 25°C :

14.5A Tc

Package / Case :

6-MICRO FOOT®CSP

Continuous Drain Current (ID) :

-14.5A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Mount :

Surface Mount

Vgs (Max) :

±8V

Published :

2016

Rise Time :

25ns

Input Capacitance :

2.22nF

Vgs(th) (Max) @ Id :

900mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 6V

Supplier Device Package :

6-Micro Foot™ (1.5x1)

Drain to Source Resistance :

21mOhm

Drain to Source Voltage (Vdss) :

12V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 5V

Rds On Max :

21 mΩ

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-12V