SI8416DB-T2-E1
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- Mfr.Part #
- SI8416DB-T2-E1
- Manufacturer
- Vishay
- Package / Case
- 6-UFBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 8V 16A 6MICRO FOOT
- Stock
- 19,052
- In Stock ：
- 19,052
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 6
- Height :
- 310μm
- Package / Case :
- 6-UFBGA
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 8V
- Width :
- 1mm
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 1.5A, 4.5V
- Threshold Voltage :
- 350mV
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 43 Weeks
- Length :
- 1.5mm
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- Power Dissipation-Max :
- 2.77W Ta 13W Tc
- ECCN Code :
- EAR99
- Power Dissipation :
- 2.77W
- Vgs(th) (Max) @ Id :
- 800mV @ 250μA
- Gate to Source Voltage (Vgs) :
- 5V
- Fall Time (Typ) :
- 20 ns
- Rise Time :
- 30ns
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Vgs (Max) :
- ±5V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 16A
- Turn On Delay Time :
- 13 ns
- Number of Channels :
- 1
- Published :
- 2013
- Turn-Off Delay Time :
- 40 ns
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1470pF @ 4V
- Radiation Hardening :
- No
- Datasheets
- SI8416DB-T2-E1
N-Channel Tape & Reel (TR) 23m Ω @ 1.5A, 4.5V ±5V 1470pF @ 4V 26nC @ 4.5V 8V 6-UFBGA
SI8416DB-T2-E1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1470pF @ 4V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 5VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 350mV.The transistor must receive a 8V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.2V 4.5V).
SI8416DB-T2-E1 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 40 ns
a threshold voltage of 350mV
a 8V drain to source voltage (Vdss)
SI8416DB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8416DB-T2-E1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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