SI8415DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

5.3A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

37m Ω @ 1A, 4.5V

Radiation Hardening :

No

Fall Time (Typ) :

32 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

15 ns

Published :

2013

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Threshold Voltage :

-1V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Additional Feature :

ULTRA LOW RESISTANCE

Vgs (Max) :

±8V

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

12V

Drain-source On Resistance-Max :

0.037Ohm

Pulsed Drain Current-Max (IDM) :

25A

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.47W

Continuous Drain Current (ID) :

-7.3A

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Power Dissipation-Max :

1.47W Ta

Turn-Off Delay Time :

180 ns

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Series :

TrenchFET®

ECCN Code :

EAR99

Package / Case :

4-XFBGA, CSPBGA

Pin Count :

4

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Position :

BOTTOM

Terminal Form :

Ball

Mounting Type :

Surface Mount

FET Type :

P-Channel

Number of Elements :

1

Number of Pins :

4

Rise Time :

32ns