SI8413DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

105 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Terminations :

4

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

33 Weeks

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

Terminal Form :

Ball

Rise Time :

50ns

Fall Time (Typ) :

50 ns

Rds On (Max) @ Id, Vgs :

48m Ω @ 1A, 4.5V

Height :

360μm

Continuous Drain Current (ID) :

-6.5A

Turn On Delay Time :

31 ns

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

4.8A Ta

Terminal Finish :

Matte Tin (Sn)

Length :

1.6mm

FET Type :

P-Channel

Package / Case :

4-XFBGA, CSPBGA

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Power Dissipation :

1.47W

Number of Channels :

1

Width :

1.6mm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

1.47W Ta

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Published :

2013

Drain-source On Resistance-Max :

0.063Ohm

Radiation Hardening :

No

Pin Count :

4

Number of Pins :

4