SI8410DB-T2-E1
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- Mfr.Part #
- SI8410DB-T2-E1
- Manufacturer
- Vishay
- Package / Case
- 4-UFBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 4MICRO FOOT
- Stock
- 1,151
- In Stock ：
- 1,151
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 30mOhm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 10V
- Series :
- TrenchFET®
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 5.7A
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 8V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- Unknown
- Mount :
- Surface Mount
- Published :
- 2014
- Factory Lead Time :
- 21 Weeks
- Threshold Voltage :
- 850mV
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- 4-UFBGA
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 780mW Ta 1.8W Tc
- Vgs(th) (Max) @ Id :
- 850mV @ 250μA
- Number of Pins :
- 4
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±8V
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 1.5A, 4.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- SI8410DB-T2-E1
N-Channel Tape & Reel (TR) 37m Ω @ 1.5A, 4.5V ±8V 620pF @ 10V 16nC @ 8V 20V 4-UFBGA
SI8410DB-T2-E1 Overview
A device's maximum input capacitance is 620pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 850mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
SI8410DB-T2-E1 Features
a continuous drain current (ID) of 5.7A
a threshold voltage of 850mV
a 20V drain to source voltage (Vdss)
SI8410DB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8410DB-T2-E1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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