SI8409DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

46m Ω @ 1A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Fall Time (Typ) :

35 ns

Lead Free :

Lead Free

Mount :

Surface Mount

Number of Terminations :

4

Number of Channels :

1

Series :

TrenchFET®

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

1.47W Ta

Length :

1.6mm

Height :

360μm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Published :

2011

Terminal Form :

Ball

Packaging :

Tape and Reel (TR)

Pin Count :

4

Factory Lead Time :

33 Weeks

Power Dissipation :

1.47W

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Width :

1.6mm

Drain to Source Breakdown Voltage :

-30V

Terminal Position :

BOTTOM

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Resistance :

46mOhm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-6.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Turn-Off Delay Time :

140 ns

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Package / Case :

4-XFBGA, CSPBGA

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Rise Time :

35ns

Turn On Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

260