SI8407DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

45ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V

Height :

355.6μm

Vgs(th) (Max) @ Id :

900mV @ 350μA

Fall Time (Typ) :

45 ns

Pbfree Code :

yes

Terminal Form :

Ball

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Vgs (Max) :

±8V

Power Dissipation :

1.47W

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Width :

2.0066mm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

-20V

Continuous Drain Current (ID) :

-8.2A

Radiation Hardening :

No

Power Dissipation-Max :

1.47W Ta

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Number of Terminations :

6

Published :

2016

Length :

2.3876mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

ECCN Code :

EAR99

Resistance :

27mOhm

Package / Case :

6-MICRO FOOT®CSP

Drain Current-Max (Abs) (ID) :

5.8A

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Turn-Off Delay Time :

520 ns

Turn On Delay Time :

30 ns

Rds On (Max) @ Id, Vgs :

27m Ω @ 1A, 4.5V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mount :

Surface Mount