SI8406DB-T2-E1
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- Mfr.Part #
- SI8406DB-T2-E1
- Manufacturer
- Vishay
- Package / Case
- 6-UFBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 16A 6MICRO FOOT
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 20V
- Vgs(th) (Max) @ Id :
- 850mV @ 250μA
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Rise Time :
- 18ns
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±8V
- Power Dissipation-Max :
- 2.77W Ta 13W Tc
- Width :
- 1mm
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 1A, 4.5V
- Continuous Drain Current (ID) :
- 16A
- Threshold Voltage :
- 400mV
- Height :
- 310μm
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Series :
- TrenchFET®
- Length :
- 1.5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 8V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Number of Pins :
- 6
- Package / Case :
- 6-UFBGA
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 30 ns
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 8V
- Turn On Delay Time :
- 7 ns
- Element Configuration :
- Single
- Factory Lead Time :
- 43 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 830pF @ 10V
- Fall Time (Typ) :
- 10 ns
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Datasheets
- SI8406DB-T2-E1
N-Channel Tape & Reel (TR) 33m Ω @ 1A, 4.5V ±8V 830pF @ 10V 20nC @ 8V 6-UFBGA
SI8406DB-T2-E1 Overview
A device's maximal input capacitance is 830pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 400mV threshold voltage.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
SI8406DB-T2-E1 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 30 ns
a threshold voltage of 400mV
SI8406DB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8406DB-T2-E1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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