SI8405DB-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

4-Microfoot

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

55 mΩ

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Height :

360μm

Min Operating Temperature :

-55°C

Package / Case :

4-XFBGA, CSPBGA

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.47W Ta

Length :

1.6mm

Power Dissipation :

2.77W

Number of Pins :

4

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

-12V

Turn On Delay Time :

16 ns

Mounting Type :

Surface Mount

Rise Time :

32ns

Rds On (Max) @ Id, Vgs :

55mOhm @ 1A, 4.5V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±8V

Drain to Source Resistance :

55mOhm

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Published :

2013

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

32 ns

Vgs(th) (Max) @ Id :

950mV @ 250μA

Number of Channels :

1

Drain to Source Voltage (Vdss) :

12V

Turn-Off Delay Time :

120 ns

Continuous Drain Current (ID) :

-3.6A

Width :

1.6mm