SI8405DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Package / Case :

4-XFBGA, CSPBGA

FET Type :

P-Channel

Rise Time :

32ns

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-12V

Power Dissipation :

1.47W

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

55mOhm @ 1A, 4.5V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

55mOhm

Vgs (Max) :

±8V

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Published :

2011

Element Configuration :

Single

Continuous Drain Current (ID) :

3.6A

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Number of Pins :

4

Mounting Type :

Surface Mount

Radiation Hardening :

No

Rds On Max :

55 mΩ

Turn-Off Delay Time :

120 ns

Fall Time (Typ) :

32 ns

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

1.47W Ta

Supplier Device Package :

4-Microfoot