SI7236DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI7236

Gate to Source Voltage (Vgs) :

12V

Package / Case :

PowerPAK® SO-8 Dual

Weight :

506.605978mg

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

60A

JESD-30 Code :

R-XDSO-C6

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

20.7A

Element Configuration :

Dual

Width :

5.89mm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

46W

Power Dissipation :

3.5W

Turn-Off Delay Time :

60 ns

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

60A

Height :

1.04mm

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Pin Count :

8

Number of Terminations :

6

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Contact Plating :

Tin

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20.7A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

15 Weeks

Pbfree Code :

yes

FET Feature :

Standard

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Length :

4.9mm

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

10 ns

JESD-609 Code :

e3

Number of Elements :

2

Terminal Form :

C BEND

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®