SI7236DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

15ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Series :

TrenchFET®

ECCN Code :

EAR99

Continuous Drain Current (ID) :

20.7A

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Published :

2016

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Turn-Off Delay Time :

60 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Number of Terminations :

6

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Transistor Element Material :

SILICON

Base Part Number :

SI7236

JESD-609 Code :

e3

Package / Case :

PowerPAK® SO-8 Dual

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 10V

Weight :

506.605978mg

Drain Current-Max (Abs) (ID) :

60A

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

80A

Current - Continuous Drain (Id) @ 25°C :

60A

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20.7A, 4.5V

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XDSO-C6

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Element Configuration :

Dual

Max Power Dissipation :

46W