SI7232DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

35 ns

Continuous Drain Current (ID) :

10A

ECCN Code :

EAR99

Number of Terminations :

6

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

16.4m Ω @ 10A, 4.5V

FET Feature :

Logic Level Gate

Pulsed Drain Current-Max (IDM) :

40A

Length :

3.05mm

Published :

2014

Pin Count :

8

Contact Plating :

Tin

Transistor Application :

SWITCHING

Number of Pins :

8

Number of Elements :

2

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

14 Weeks

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 10V

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.0164ohm

Avalanche Energy Rating (Eas) :

11 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

10 ns

Pbfree Code :

yes

Radiation Hardening :

No

Lead Free :

Lead Free

Terminal Form :

C BEND

Power Dissipation :

2.6W

Current - Continuous Drain (Id) @ 25°C :

25A

Rise Time :

10ns

Max Power Dissipation :

23W

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

JESD-30 Code :

S-XDSO-C6

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.05mm

Mount :

Surface Mount

Package / Case :

PowerPAK® 1212-8 Dual

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 8V

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI7232

Height :

1.17mm