SI7224DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

10 ns

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.5A, 10V

Length :

3.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

SI7224

Case Connection :

DRAIN

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Height :

1.04mm

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Pbfree Code :

yes

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Max Power Dissipation :

23W

Drain Current-Max (Abs) (ID) :

6A

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Number of Elements :

2

JESD-30 Code :

S-XDSO-C6

Package / Case :

PowerPAK® 1212-8 Dual

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

6A

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Width :

3.3mm

Number of Channels :

2

Series :

TrenchFET®

Power - Max :

17.8W 23W

Factory Lead Time :

15 Weeks

Pin Count :

8

Turn-Off Delay Time :

15 ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.035Ohm

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

6

Turn On Delay Time :

20 ns

Rise Time :

10ns

Operating Mode :

ENHANCEMENT MODE