SI7224DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.5A, 10V

JESD-30 Code :

S-XDSO-C6

Width :

3.3mm

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Transistor Element Material :

SILICON

Number of Channels :

2

Base Part Number :

SI7224

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.035Ohm

Number of Terminations :

6

Published :

2016

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

6A

Pin Count :

8

Terminal Form :

C BEND

Number of Pins :

8

Transistor Application :

SWITCHING

Pbfree Code :

yes

Max Power Dissipation :

23W

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Length :

3.3mm

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

20 ns

Package / Case :

PowerPAK® 1212-8 Dual

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Fall Time (Typ) :

10 ns

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

10ns

Power - Max :

17.8W 23W

Continuous Drain Current (ID) :

6A

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

15 ns

Element Configuration :

Dual

Height :

1.04mm

Factory Lead Time :

25 Weeks

FET Type :

2 N-Channel (Dual)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Elements :

2