SI7222DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

40V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

JESD-30 Code :

S-XDSO-C6

Transistor Application :

SWITCHING

Pin Count :

8

Height :

1.07mm

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 20V

Rds On (Max) @ Id, Vgs :

42m Ω @ 5.7A, 10V

Threshold Voltage :

1.6V

Drain to Source Breakdown Voltage :

40V

Base Part Number :

SI7222

FET Feature :

Standard

Length :

3.15mm

Pbfree Code :

yes

Turn On Delay Time :

9 ns

ECCN Code :

EAR99

Rise Time :

50ns

Element Configuration :

Dual

Width :

3.15mm

Number of Elements :

2

Number of Terminations :

6

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Resistance :

42mOhm

Turn-Off Delay Time :

21 ns

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

17.8W

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® 1212-8 Dual

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Series :

TrenchFET®

Drain Current-Max (Abs) (ID) :

6A

Radiation Hardening :

No

Published :

2009

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

7 ns

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Max Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Continuous Drain Current (ID) :

6A