SI7220DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Length :

3.05mm

Power Dissipation :

1.3W

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

3.4A

Turn-Off Delay Time :

20 ns

Terminal Form :

C BEND

JESD-30 Code :

S-XDSO-C6

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

6

Turn On Delay Time :

10 ns

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Height :

1.04mm

Pin Count :

8

Width :

3.05mm

Published :

2015

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

JESD-609 Code :

e3

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Resistance :

60mOhm

Continuous Drain Current (ID) :

4.8A

Drain Current-Max (Abs) (ID) :

3.4A

Series :

TrenchFET®

Base Part Number :

SI7220

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Package / Case :

PowerPAK® 1212-8 Dual

Max Power Dissipation :

1.3W

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

10ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.8A, 10V

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual)

Avalanche Energy Rating (Eas) :

6.1 mJ

Element Configuration :

Dual