SI7218DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

2 N-Channel (Dual)

Rise Time :

12ns

Fall Time (Typ) :

10 ns

Package / Case :

PowerPAK® 1212-8 Dual

Current - Continuous Drain (Id) @ 25°C :

24A

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Number of Terminations :

6

Case Connection :

DRAIN

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

8A

Transistor Application :

SWITCHING

Published :

2014

Power Dissipation :

2.6W

JESD-609 Code :

e3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

25m Ω @ 8A, 10V

Height :

1.04mm

Radiation Hardening :

No

Pin Count :

8

Element Configuration :

Dual

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Base Part Number :

SI7218

Turn-Off Delay Time :

10 ns

Series :

TrenchFET®

Length :

3.05mm

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

35A

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Number of Elements :

2

Width :

3.05mm

Factory Lead Time :

15 Weeks

JESD-30 Code :

S-XDSO-C6

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

5 mJ

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

8A

Max Power Dissipation :

23W