SI7216DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

57ns

FET Type :

2 N-Channel (Dual)

Power Dissipation :

2.5W

Turn On Delay Time :

9 ns

Current - Continuous Drain (Id) @ 25°C :

6A

Width :

3.05mm

Avalanche Energy Rating (Eas) :

5 mJ

Factory Lead Time :

14 Weeks

Series :

TrenchFET®

Published :

2012

JESD-30 Code :

S-XDSO-C6

REACH SVHC :

Unknown

Pin Count :

8

ECCN Code :

EAR99

Max Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

32m Ω @ 5A, 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

5 ns

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Number of Terminations :

6

Number of Elements :

2

FET Feature :

Standard

Number of Pins :

8

Element Configuration :

Dual

Contact Plating :

Tin

Length :

3.05mm

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 20V

Drain to Source Voltage (Vdss) :

40V

Base Part Number :

SI7216

Lead Free :

Lead Free

Threshold Voltage :

3V

Package / Case :

PowerPAK® 1212-8 Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Number of Channels :

2

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Power - Max :

20.8W

Height :

1.04mm

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

39mOhm

Pbfree Code :

yes

Turn-Off Delay Time :

19 ns

Operating Temperature :

-50°C~150°C TJ

JESD-609 Code :

e3

Transistor Element Material :

SILICON