SI7216DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

5 mJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

3.05mm

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

19 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Fall Time (Typ) :

5 ns

Continuous Drain Current (ID) :

6A

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks

Power - Max :

20.8W

JESD-609 Code :

e3

Number of Terminations :

6

Threshold Voltage :

3V

Rds On (Max) @ Id, Vgs :

32m Ω @ 5A, 10V

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Height :

1.04mm

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6.5A

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 20V

Mount :

Surface Mount

Number of Pins :

8

Terminal Form :

C BEND

Turn On Delay Time :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Rise Time :

57ns

Package / Case :

PowerPAK® 1212-8 Dual

Max Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Series :

TrenchFET®

Case Connection :

DRAIN

Number of Channels :

2

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-50°C~150°C TJ

Transistor Application :

SWITCHING

Resistance :

40mOhm

Base Part Number :

SI7216

Radiation Hardening :

No

Published :

2011

Lead Free :

Lead Free

FET Feature :

Standard

Length :

3.05mm

Element Configuration :

Dual

Power Dissipation :

2.5W

JESD-30 Code :

S-XDSO-C6

Packaging :

Tape and Reel (TR)