SI7214DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

PowerPAK® 1212-8 Dual

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-XDSO-C6

REACH SVHC :

Unknown

Width :

3.05mm

Series :

TrenchFET®

Max Power Dissipation :

1.3W

Current - Continuous Drain (Id) @ 25°C :

4.6A

Rds On (Max) @ Id, Vgs :

40m Ω @ 6.4A, 10V

Radiation Hardening :

No

Threshold Voltage :

2.1V

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Mount :

Surface Mount

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

Published :

2007

Drain Current-Max (Abs) (ID) :

4.6A

Transistor Element Material :

SILICON

Fall Time (Typ) :

10 ns

Pbfree Code :

yes

Resistance :

40mOhm

Number of Pins :

8

Base Part Number :

SI7214

FET Feature :

Logic Level Gate

Number of Elements :

2

Lead Free :

Lead Free

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

6.4A

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Turn-Off Delay Time :

19 ns

Power Dissipation :

1.3W

FET Type :

2 N-Channel (Dual)

Terminal Form :

C BEND

Gate to Source Voltage (Vgs) :

20V

Length :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Height :

1.04mm

ECCN Code :

EAR99

Turn On Delay Time :

7 ns