SI7212DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

36m Ω @ 6.8A, 10V

Drain to Source Breakdown Voltage :

30V

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Fall Time (Typ) :

12 ns

Number of Elements :

2

Max Power Dissipation :

1.3W

Pin Count :

8

Width :

3.05mm

Power Dissipation :

1.3W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4.9A

Base Part Number :

SI7212

JESD-609 Code :

e3

Package / Case :

PowerPAK® 1212-8 Dual

Rise Time :

12ns

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.036Ohm

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

30 ns

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

6.8A

Published :

2015

Lead Free :

Lead Free

Mount :

Surface Mount

Radiation Hardening :

No

Length :

3.05mm

Pbfree Code :

yes

JESD-30 Code :

S-XDSO-C6

Terminal Form :

C BEND

Current - Continuous Drain (Id) @ 25°C :

4.9A

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Height :

1.04mm

Transistor Application :

SWITCHING

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30