SI4398DY-T1-E3
- Mfr.Part #
- SI4398DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 19A 8SO
- Stock
- 2,580
- In Stock :
- 2,580
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Drain to Source Resistance :
- 2.8MOhm
- Rise Time :
- 15ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Voltage (Vdss) :
- 20V
- Supplier Device Package :
- 8-SO
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1
- Height :
- 1.55mm
- Published :
- 2015
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5620pF @ 10V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Weight :
- 186.993455mg
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 25A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Length :
- 5mm
- Rds On (Max) @ Id, Vgs :
- 2.8mOhm @ 25A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 80 ns
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 23 ns
- Power Dissipation :
- 1.6W
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 20V
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1.6W Ta
- Fall Time (Typ) :
- 23 ns
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Input Capacitance :
- 5.62nF
- Rds On Max :
- 2.8 mΩ
- Mounting Type :
- Surface Mount
- Width :
- 4mm
- Datasheets
- SI4398DY-T1-E3

N-Channel Tape & Reel (TR) 2.8mOhm @ 25A, 10V ±20V 5620pF @ 10V 50nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
SI4398DY-T1-E3 Overview
A device's maximum input capacitance is 5620pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.8mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4398DY-T1-E3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 80 ns
single MOSFETs transistor is 2.8mOhm
a 20V drain to source voltage (Vdss)
SI4398DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4398DY-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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