SI4396DY-T1-E3
- Mfr.Part #
- SI4396DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A 8SO
- Stock
- 3,223
- In Stock :
- 3,223
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Pure Matte Tin (Sn)
- Turn-Off Delay Time :
- 24 ns
- Fall Time (Typ) :
- 8 ns
- Continuous Drain Current (ID) :
- 16A
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Resistance :
- 11.5mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 12.3A
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Series :
- TrenchFET®
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 10A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 8
- Published :
- 2009
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Pin Count :
- 8
- Vgs(th) (Max) @ Id :
- 2.6V @ 250μA
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 3.1W Ta 5.4W Tc
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Pulsed Drain Current-Max (IDM) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1675pF @ 15V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Rise Time :
- 29ns
- Pbfree Code :
- yes
- Datasheets
- SI4396DY-T1-E3

N-Channel Tape & Reel (TR) 11.5m Ω @ 10A, 10V ±20V 1675pF @ 15V 45nC @ 10V 8-SOIC (0.154, 3.90mm Width)
SI4396DY-T1-E3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 20 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1675pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.12.3A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 24 ns.Peak drain current for this device is 40A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI4396DY-T1-E3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 40A.
SI4396DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4396DY-T1-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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