SI4384DY-T1-E3

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Mfr.Part #
SI4384DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 10A 8SO
Stock
2,768
In Stock :
2,768

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
TrenchFET®
Resistance :
8.5mOhm
Pin Count :
8
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
Gull wing
DS Breakdown Voltage-Min :
30V
Lead Free :
Lead Free
FET Type :
N-Channel
Element Configuration :
Single
Nominal Vgs :
1 V
Vgs (Max) :
±20V
REACH SVHC :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Width :
3.9878mm
Number of Terminations :
8
Mount :
Surface Mount
Contact Plating :
Tin
Power Dissipation :
1.47W
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 4.5V
Number of Pins :
8
Length :
4.9784mm
Fall Time (Typ) :
13 ns
Weight :
186.993455mg
Rds On (Max) @ Id, Vgs :
8.5m Ω @ 15A, 10V
Rise Time :
13ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Additional Feature :
FAST SWITCHING
JESD-609 Code :
e3
Number of Channels :
1
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
3V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Published :
2006
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
30V
Terminal Position :
Dual
Height :
1.5494mm
Gate to Source Voltage (Vgs) :
20V
Transistor Application :
SWITCHING
Power Dissipation-Max :
1.47W Ta
Continuous Drain Current (ID) :
15A
Turn On Delay Time :
10 ns
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Turn-Off Delay Time :
45 ns
Datasheets
SI4384DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4384DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:8, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Channels:1, SI4384DY-T1-E3 pinout, SI4384DY-T1-E3 datasheet PDF, SI4384DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4384DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4384DY-T1-E3


N-Channel Tape & Reel (TR) 8.5m Ω @ 15A, 10V ±20V 18nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)

SI4384DY-T1-E3 Overview


Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI4384DY-T1-E3 Features


a continuous drain current (ID) of 15A
the turn-off delay time is 45 ns
a 30V drain to source voltage (Vdss)


SI4384DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4384DY-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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