SI4368DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Terminal Form :

Gull wing

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Published :

2009

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Turn On Delay Time :

25 ns

Drain-source On Resistance-Max :

0.0032Ohm

JESD-609 Code :

e3

Continuous Drain Current (ID) :

17A

Weight :

186.993455mg

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.6W Ta

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

41 ns

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

8340pF @ 15V

Turn-Off Delay Time :

172 ns

Pin Count :

8

Vgs (Max) :

±12V

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

Series :

TrenchFET®

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

Element Configuration :

Single

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Rise Time :

20ns

Terminal Finish :

PURE MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8