SI4368DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

186.993455mg

FET Type :

N-Channel

Power Dissipation-Max :

1.6W Ta

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Resistance :

3.2mOhm

Input Capacitance (Ciss) (Max) @ Vds :

8340pF @ 15V

Pin Count :

8

Width :

4mm

Fall Time (Typ) :

20 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

20ns

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Transistor Element Material :

SILICON

Turn On Delay Time :

25 ns

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

Series :

TrenchFET®

Number of Pins :

8

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Vgs (Max) :

±12V

Published :

2016

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

17A

Height :

1.55mm

Number of Terminations :

8

Mounting Type :

Surface Mount

Length :

5mm

Element Configuration :

Single

Number of Elements :

1

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Power Dissipation :

1.6W

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Turn-Off Delay Time :

172 ns

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant