SI4354DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

R-PDSO-G8

Fall Time (Typ) :

9 ns

Mount :

Surface Mount

Terminal Form :

Gull wing

Number of Terminations :

8

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 9.5A, 10V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Turn On Delay Time :

8 ns

Element Configuration :

Single

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0165ohm

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

9.5A

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta

Turn-Off Delay Time :

28 ns

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

8

Packaging :

Tape and Reel (TR)