SI4348DY-T1-E3
- Mfr.Part #
- SI4348DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8A 8SO
- Stock
- 3,017
- In Stock :
- 3,017
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- TrenchFET®
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Reach Compliance Code :
- Unknown
- Fall Time (Typ) :
- 11 ns
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 8A
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Gate to Source Voltage (Vgs) :
- 12V
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Type :
- N-Channel
- Factory Lead Time :
- 21 Weeks
- Turn On Delay Time :
- 10 ns
- Height :
- 1.55mm
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Channels :
- 1
- Width :
- 4mm
- Rise Time :
- 11ns
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Weight :
- 186.993455mg
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 11A, 10V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Terminal Position :
- Dual
- Published :
- 2009
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation-Max :
- 1.31W Ta
- Vgs (Max) :
- ±12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Pin Count :
- 8
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 55 ns
- Mount :
- Surface Mount
- Datasheets
- SI4348DY-T1-E3

N-Channel Tape & Reel (TR) 12.5m Ω @ 11A, 10V ±12V 23nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4348DY-T1-E3 Overview
Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4348DY-T1-E3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 55 ns
SI4348DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4348DY-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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