SI4336DY-T1-E3
- Mfr.Part #
- SI4336DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17A 8SO
- Stock
- 77,690
- In Stock :
- 77,690
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 3.25 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5600pF @ 15V
- Height :
- 1.55mm
- Min Operating Temperature :
- -55°C
- Weight :
- 186.993455mg
- Drain to Source Resistance :
- 3.25mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 17A
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 24 ns
- Width :
- 4mm
- Drain to Source Voltage (Vdss) :
- 30V
- Input Capacitance :
- 5.6nF
- Supplier Device Package :
- 8-SO
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 1.6W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 3.25mOhm @ 25A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Rise Time :
- 16ns
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 16 ns
- Turn-Off Delay Time :
- 90 ns
- Published :
- 2008
- Max Operating Temperature :
- 150°C
- Series :
- TrenchFET®
- Element Configuration :
- Single
- Length :
- 5mm
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta
- Number of Channels :
- 1
- Datasheets
- SI4336DY-T1-E3

N-Channel Tape & Reel (TR) 3.25mOhm @ 25A, 10V ±20V 5600pF @ 15V 50nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
SI4336DY-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5600pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 17A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 90 ns.This device has a drain-to-source resistance of 3.25mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI4336DY-T1-E3 Features
a continuous drain current (ID) of 17A
the turn-off delay time is 90 ns
single MOSFETs transistor is 3.25mOhm
a 30V drain to source voltage (Vdss)
SI4336DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4336DY-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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