SI4324DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.9878mm

Turn-Off Delay Time :

30 ns

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

36A

Published :

2009

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

70A

Power Dissipation :

3.5W

Radiation Hardening :

No

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3510pF @ 15V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

13 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

3.5W Ta 7.8W Tc

Turn On Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

24A

ECCN Code :

EAR99

Element Configuration :

Single

Rise Time :

135ns

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

FET Type :

N-Channel

Resistance :

3.2mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Vgs (Max) :

±20V

Length :

4.9784mm

Series :

TrenchFET®

Pin Count :

8

Height :

1.5494mm

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V