SI4320DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 15V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

Weight :

186.993455mg

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Elements :

1

Turn-Off Delay Time :

107 ns

Number of Pins :

8

Number of Terminations :

8

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 10V

FET Type :

N-Channel

Power Dissipation-Max :

1.6W Ta

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Length :

5mm

Height :

1.55mm

Fall Time (Typ) :

21 ns

Mounting Type :

Surface Mount

Published :

2013

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

17A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.003Ohm

Width :

4mm

Terminal Finish :

MATTE TIN

Rise Time :

21ns

Terminal Position :

Dual

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Turn On Delay Time :

27 ns

Number of Channels :

1

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.6W