SI2312BDS-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

850mV @ 250μA

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Resistance :

31mOhm

Nominal Vgs :

450 mV

Pin Count :

3

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Weight :

1.437803g

Rise Time :

30ns

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Height :

1.016mm

Continuous Drain Current (ID) :

5A

Power Dissipation :

750mW

Dual Supply Voltage :

20V

Radiation Hardening :

No

Turn On Delay Time :

9 ns

Contact Plating :

Tin

Length :

3.0226mm

Power Dissipation-Max :

750mW Ta

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

31m Ω @ 5A, 4.5V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Width :

1.397mm

Number of Elements :

1

Number of Terminations :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Termination :

SMD/SMT

Published :

2008

Pbfree Code :

yes

Threshold Voltage :

850mV

Number of Channels :

1

Element Configuration :

Single

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V