SI1036X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

540m Ω @ 500mA, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Resistance :

540mOhm

FET Feature :

Standard

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

610mA Ta

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PDSO-F6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-563, SOT-666

Power - Max :

220mW

Transistor Application :

SWITCHING

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

TrenchFET®

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Flat

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE