SI1035X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

250mW

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 4.5V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

180mA

Number of Elements :

2

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

6

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

32.006612mg

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

260

Height :

600μm

Resistance :

8Ohm

Base Part Number :

SI1035

Gate to Source Voltage (Vgs) :

5V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Length :

1.7mm

Pin Count :

6

Series :

TrenchFET®

Lead Free :

Lead Free

Terminal Form :

Flat

Additional Feature :

LOW THRESHOLD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Feature :

Logic Level Gate

Terminal Position :

Dual

Published :

2016

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Package / Case :

SOT-563, SOT-666

Vgs(th) (Max) @ Id :

400mV @ 250μA (Min)

Drain Current-Max (Abs) (ID) :

0.18A

Current - Continuous Drain (Id) @ 25°C :

180mA 145mA

Mounting Type :

Surface Mount

Width :

1.2mm