SI1029X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Single

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

305mA 190mA

Max Operating Temperature :

150°C

Nominal Vgs :

2.5 V

Length :

1.7mm

Published :

2009

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Resistance :

4Ohm

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 500mA, 10V

Base Part Number :

SI1029

Mounting Type :

Surface Mount

Weight :

32.006612mg

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 25V

Number of Elements :

2

Threshold Voltage :

2.5V

FET Type :

N and P-Channel

Number of Channels :

2

FET Feature :

Logic Level Gate

Series :

TrenchFET®

Supplier Device Package :

SC-89-6

Mount :

Surface Mount

Drain to Source Resistance :

4Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Power - Max :

250mW

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

250mW

Input Capacitance :

30pF

Number of Pins :

6

Height :

600μm

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

35 ns

Width :

1.2mm

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Continuous Drain Current (ID) :

500mA

REACH SVHC :

No SVHC

Rds On Max :

3 Ω

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Dual Supply Voltage :

60V

Max Power Dissipation :

250mW