SI1025X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Length :

1.7mm

Mounting Type :

Surface Mount

Drain to Source Resistance :

8Ohm

Max Power Dissipation :

250mW

Drain to Source Voltage (Vdss) :

60V

Resistance :

4Ohm

Published :

2012

Number of Pins :

6

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

190mA

Height :

600μm

Package / Case :

SOT-563, SOT-666

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 15V

Drain to Source Breakdown Voltage :

-60V

Element Configuration :

Dual

Lead Free :

Lead Free

Series :

TrenchFET®

Input Capacitance :

23pF

FET Type :

2 P-Channel (Dual)

Width :

1.2mm

Max Operating Temperature :

150°C

Threshold Voltage :

-3V

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Power - Max :

250mW

Rds On (Max) @ Id, Vgs :

4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

SI1025

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

500mA

Power Dissipation :

250mW

Supplier Device Package :

SC-89-6

Weight :

32.006612mg

Mount :

Surface Mount

Rds On Max :

4 Ω