SI1023CX-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

0.45A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Continuous Drain Current (ID) :

450mA

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Turn On Delay Time :

9 ns

Turn-Off Delay Time :

10 ns

Pin Count :

6

JESD-609 Code :

e3

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

8 ns

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

220mW

Max Power Dissipation :

220mW

Pbfree Code :

yes

Rise Time :

10ns

Drain-source On Resistance-Max :

1.038Ohm

Published :

2016

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Gate to Source Voltage (Vgs) :

8V

Package / Case :

SOT-563, SOT-666

Rds On (Max) @ Id, Vgs :

756m Ω @ 350mA, 4.5V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Terminal Finish :

PURE MATTE TIN

ECCN Code :

EAR99

Number of Pins :

6

Series :

TrenchFET®