SI1016X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

485mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Length :

1.7mm

ECCN Code :

EAR99

Base Part Number :

SI1016

Gate to Source Voltage (Vgs) :

6V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

Pin Count :

6

Radiation Hardening :

No

Additional Feature :

LOW THRESHOLD

Width :

1.2mm

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Number of Elements :

2

Package / Case :

SOT-563, SOT-666

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Weight :

32.006612mg

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

485mA 370mA

Resistance :

700mOhm

JESD-609 Code :

e3

Number of Pins :

6

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

250mW

Published :

2016

Drain Current-Max (Abs) (ID) :

0.485A

Power Dissipation :

250mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Height :

600μm

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON