SI1016X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

250mW

Power Dissipation :

250mW

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Base Part Number :

SI1016

Supplier Device Package :

SC-89-6

Power - Max :

250mW

Lead Free :

Lead Free

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Drain to Source Resistance :

1.2Ohm

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

6V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

20V

Package / Case :

SOT-563, SOT-666

Termination :

SMD/SMT

Series :

TrenchFET®

Height :

600μm

Rds On (Max) @ Id, Vgs :

700mOhm @ 600mA, 4.5V

Min Operating Temperature :

-55°C

Length :

1.7mm

Continuous Drain Current (ID) :

600mA

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Number of Channels :

2

FET Type :

N and P-Channel

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2016

Number of Elements :

2

Resistance :

1.2Ohm

Weight :

32.006612mg

Width :

1.2mm

Nominal Vgs :

800 mV

Rds On Max :

700 mΩ

Current - Continuous Drain (Id) @ 25°C :

485mA 370mA

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

800mV

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V