SH8J65TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance :

1.2nF

Supplier Device Package :

8-SOP

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Published :

2009

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Rds On (Max) @ Id, Vgs :

29mOhm @ 7A, 10V

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

FET Feature :

Logic Level Gate

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-30V

Drain to Source Resistance :

31mOhm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Factory Lead Time :

20 Weeks

Base Part Number :

*J65

Number of Pins :

8

Max Operating Temperature :

150°C

Rds On Max :

29 mΩ

Current - Continuous Drain (Id) @ 25°C :

7A

FET Type :

2 P-Channel (Dual)

Power - Max :

2W

Continuous Drain Current (ID) :

7A

Power Dissipation :

2W