SGSD100

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Mfr.Part #
SGSD100
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 80V 25A TO247-3
Stock
49,153
In Stock :
49,153

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Packaging :
Tube
Qualification Status :
Not Qualified
Collector Emitter Voltage (VCEO) :
80V
Pbfree Code :
yes
Polarity :
NPN
Base Part Number :
SGSD100
hFE Min :
300
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 10A 3V
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 80mA, 20A
Emitter Base Voltage (VEBO) :
3.3V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
VCEsat-Max :
3.5 V
Number of Elements :
1
Reach Compliance Code :
not_compliant
Package / Case :
TO-247-3
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Collector Base Voltage (VCBO) :
80V
JESD-30 Code :
R-PSFM-T3
Min Operating Temperature :
-65°C
Max Collector Current :
25A
Transistor Type :
NPN - Darlington
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Saturation Voltage :
1.2V
Voltage - Rated DC :
80V
Max Power Dissipation :
130W
Max Operating Temperature :
150°C
Current - Collector Cutoff (Max) :
500μA
ECCN Code :
EAR99
Current Rating :
25A
Pin Count :
3
Lead Free :
Lead Free
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
245
Datasheets
SGSD100
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics SGSD100 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:SGSD100, Package / Case:TO-247-3, Number of Terminations:3, SGSD100 pinout, SGSD100 datasheet PDF, SGSD100 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics SGSD100 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics SGSD100


NPN - Darlington 500μA 1 Elements 3 Terminations TO-247-3 Tube Through Hole

SGSD100 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 500 @ 10A 3V.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.When VCE saturation is 3.5V @ 80mA, 20A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 3.3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 25A.A maximum collector current of 25A volts can be achieved.

SGSD100 Features


the DC current gain for this device is 500 @ 10A 3V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 3.5V @ 80mA, 20A
the emitter base voltage is kept at 3.3V
the current rating of this device is 25A


SGSD100 Applications


There are a lot of STMicroelectronics
SGSD100 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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