SGP10N60RUFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

208W

Collector Emitter Voltage (VCEO) :

600V

Td (on/off) @ 25°C :

15ns/36ns

Element Configuration :

Single

Test Condition :

300V, 10A, 20 Ω, 15V

JEDEC-95 Code :

TO-220AB

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

Base Part Number :

SG*10N60

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

600V

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

284 ns

Fall Time-Max (tf) :

220ns

Current - Collector Pulsed (Icm) :

30A

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation :

75W

Switching Energy :

141μJ (on), 215μJ (off)

Gate Charge :

30nC

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Weight :

1.8g

Transistor Element Material :

SILICON

Voltage - Rated DC :

600V

Radiation Hardening :

No

Current Rating :

10A

JESD-609 Code :

e3

Mount :

Through Hole

Turn On Time :

49 ns

Transistor Application :

Motor Control

Input Type :

Standard

Collector Emitter Saturation Voltage :

2.2V

Lead Free :

Lead Free

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Additional Feature :

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Gate-Emitter Voltage-Max :

20V

Published :

2013

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Reverse Recovery Time :

42 ns

Gate-Emitter Thr Voltage-Max :

8V

Max Collector Current :

16A