SFW9640TM
- Mfr.Part #
- SFW9640TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 11A D2PAK
- Stock
- 33,909
- In Stock :
- 33,909
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 500mOhm @ 5.5A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 19 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 11A
- Power Dissipation-Max :
- 3.1W Ta 123W Tc
- Power Dissipation :
- 3.1W
- Drain to Source Resistance :
- 500MOhm
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Drain to Source Breakdown Voltage :
- -200V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 1.585nF
- Mounting Type :
- Surface Mount
- Rds On Max :
- 500 mΩ
- Vgs (Max) :
- ±30V
- Published :
- 1997
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 23ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- D2PAK (TO-263AB)
- Turn-Off Delay Time :
- 54 ns
- Datasheets
- SFW9640TM

P-Channel Tape & Reel (TR) 500mOhm @ 5.5A, 10V ±30V 1585pF @ 25V 59nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFW9640TM Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1585pF @ 25V.This device conducts a continuous drain current (ID) of 11A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 500mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SFW9640TM Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 500mOhm
a 200V drain to source voltage (Vdss)
SFW9640TM Applications
There are a lot of ON Semiconductor
SFW9640TM applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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