SFW9530TM
- Mfr.Part #
- SFW9530TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 10.5A D2PAK
- Stock
- 1,600
- In Stock :
- 1,600
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pbfree Code :
- yes
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.3Ohm
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 10.5A
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.035pF @ 25V
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Surface Mount :
- yes
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 5.3A, 10V
- Avalanche Energy Rating (Eas) :
- 368 mJ
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 42A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 3.8W Ta 66W Tc
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- SFW9530TM

P-Channel Tape & Reel (TR) 300m Ω @ 5.3A, 10V ±30V 1.035pF @ 25V 38nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFW9530TM Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 368 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.035pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 10.5A.Pulsed drain current is maximum rated peak drain current 42A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SFW9530TM Features
the avalanche energy rating (Eas) is 368 mJ
based on its rated peak drain current 42A.
a 100V drain to source voltage (Vdss)
SFW9530TM Applications
There are a lot of Rochester Electronics, LLC
SFW9530TM applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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