SFT1423-E
- Mfr.Part #
- SFT1423-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2A TP
- Stock
- 8,025
- In Stock :
- 8,025
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 27 ns
- Radiation Hardening :
- No
- Published :
- 2013
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- JESD-609 Code :
- e6
- Rds On (Max) @ Id, Vgs :
- 4.9 Ω @ 1A, 10V
- Surface Mount :
- No
- Rise Time :
- 8.8ns
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 42 ns
- Packaging :
- Bulk
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 175pF @ 30V
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 1W
- Continuous Drain Current (ID) :
- 2A
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Turn On Delay Time :
- 7.4 ns
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 2A
- Power Dissipation-Max :
- 1W Ta 20W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 10V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Datasheets
- SFT1423-E

N-Channel Bulk 4.9 Ω @ 1A, 10V ±20V 175pF @ 30V 8.7nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
SFT1423-E Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 175pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 42 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.
SFT1423-E Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 42 ns
SFT1423-E Applications
There are a lot of ON Semiconductor
SFT1423-E applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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