SFT1202-TL-E
- Mfr.Part #
- SFT1202-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 150V 2A TPFA
- Stock
- 4,391
- In Stock :
- 4,391
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Transition Frequency :
- 140MHz
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 150V
- Power - Max :
- 1W
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 180V
- Max Collector Current :
- 2A
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- JESD-609 Code :
- e6
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- Published :
- 2012
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 150V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Pins :
- 3
- hFE Min :
- 200
- Factory Lead Time :
- 2 Weeks
- Terminal Position :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 165mV @ 100mA, 1A
- Frequency - Transition :
- 140MHz
- Datasheets
- SFT1202-TL-E

NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
SFT1202-TL-E Overview
In this device, the DC current gain is 200 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 165mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
SFT1202-TL-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
SFT1202-TL-E Applications
There are a lot of ON Semiconductor
SFT1202-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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